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DMN2230U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features * Low On-Resistance * 110 m @ VGS = 4.5V * 145 m @ VGS = 2.5V * 230 m @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 5) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * SOT-23 NEW PRODUCT * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) D G TOP VIEW S TOP VIEW Internal Schematic Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS ID IDM Value 20 12 2.0 7 Units V V A A Thermal Characteristics Total Power Dissipation (Note 1) @TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 600 208 -55 to +150 Units mW C/W C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, or minimum recommended pad layout 2. No purposefully added lead. Halogen and Antimony Free. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Repetitive rating, pulse width limited by junction temperature. 5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. DMN2230U Document number: DS31180 Rev. 4 - 2 1 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN2230U Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 6. Short duration pulse test used to minimize self-heating effect. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss td(on) tr td(off) tf Min 20 0.5 Typ 81 113 170 5 0.8 188 44 30 8 3.8 19.6 8.3 Max 1 10 1.0 110 145 230 1.1 ns VDD = 10V, RL = 10 ID = 1A, VGEN = 4.5V, RG = 6 Unit V A A V m S V pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10A VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VDS = VCS, ID = 250A VGS = 4.5V, ID = 2.5A VGS = 2.5V, ID = 1.5A VGS = 1.8V, ID = 1.0A VDS =5V, ID = 2.4A VGS = 0V, IS = 1.05A NEW PRODUCT 10 8 7 8 6 6 5 4 4 3 2 2 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 DMN2230U Document number: DS31180 Rev. 4 - 2 2 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN2230U 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 1.8 VGS = 2.5V ID = 1.5A 1.6 R DS(ON) NORMALIZED VGS = 4.5V ID = 2.5A 1.4 NEW PRODUCT VGS = 1.8V 0.1 VGS = 2.5V VGS = 4.5V 1.2 VGS = 1.8V ID = 1.0A 1 0.8 0.01 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT Fig. 3 On-Resistance vs. Drain-Source Current & Gate Voltage 10 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 1 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1,000 f = 1MHz 0.6 C, TOTAL CAPACITANCE (pF) 0.8 ID = 250A Ciss 100 0.4 Coss Crss 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation with Temperature 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 20 10 IS, SOURCE CURRENT (A) 1 0.1 0.01 0.001 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMN2230U Document number: DS31180 Rev. 4 - 2 3 of 4 www.diodes.com June 2008 (c) Diodes Incorporated DMN2230U Ordering Information Part Number DMN2230U-7 Notes: (Note 7) Case SOT-23 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NEW PRODUCT 22N = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 22N Date Code Key (If Applicable) Year 2007 Code U Month Code Jan 1 Feb 2 Mar 3 2008 V Apr 4 May 5 YM 2009 W Jun 6 Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Package Outline Dimensions A D B G TOP VIEW S E D G H K J L C M SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0 8 All Dimensions in mm Suggested Pad Layout Dimensions Value (in mm) 3.4 0.7 0.9 1.4 2.0 0.9 Y Z G C Z G X Y C E X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2230U Document number: DS31180 Rev. 4 - 2 4 of 4 www.diodes.com June 2008 (c) Diodes Incorporated |
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